熊谷研究員の論文がOrg. Electron.に掲載されました。

熊谷研究員の論文がOrganic Electronicsに掲載されました。

Solution-processed organic-inorganic hybrid CMOS inverter exhibiting a high gain reaching 890
S. Kumagai, H. Murakami, K. Tsuzuku, T. Makita, C. Mitsui, T. Okamoto, S. Watanabe, and J. Takeya
Org. Electron., 48, 127–131 (2017).
DOI:org/10.1016/j.orgel.2017.05.050

Abstract:

In this letter, we present a fabrication scheme and device performances of an organic–inorganic hybrid CMOS inverter employing a high-performance p-type organic semiconductor and an amorphous metal oxide layers. A deterioration of the oxide layer during device processing, which is often found in solution-processed semiconductor oxides, can be avoided by a one-shot solution-crystallization technique utilizing a polymer-blend. Both the p- and the n-type channels exhibited excellent transistor performances with high carrier mobilities and with precipitous turn-on behaviors near the gate voltages of 0 V, resulting in a successful demonstration of an ideal CMOS inverter operation with gain of 890. This result will update a potential excellence of organic–inorganic hybrid CMOS circuits in practical devices.