Solution-processed organic-inorganic hybrid CMOS inverter exhibiting a high gain reaching 890
S. Kumagai, H. Murakami, K. Tsuzuku, T. Makita, C. Mitsui, T. Okamoto, S. Watanabe, and J. Takeya
Org. Electron., 48, 127–131 (2017).
In this letter, we present a fabrication scheme and device performances of an organic–inorganic hybrid CMOS inverter employing a high-performance p-type organic semiconductor and an amorphous metal oxide layers. A deterioration of the oxide layer during device processing, which is often found in solution-processed semiconductor oxides, can be avoided by a one-shot solution-crystallization technique utilizing a polymer-blend. Both the p- and the n-type channels exhibited excellent transistor performances with high carrier mobilities and with precipitous turn-on behaviors near the gate voltages of 0 V, resulting in a successful demonstration of an ideal CMOS inverter operation with gain of 890. This result will update a potential excellence of organic–inorganic hybrid CMOS circuits in practical devices.