Our paper “Investigation of Hole Transporting Properties in Thin-Film and Single-Crystal Organic Field-Effect Transistor Based on Dinaphtho[2,1-b:1′,2′-d]thiophene” is available online in Japanese Journal of Applied Physics.
- Investigation of Hole Transporting Properties in Thin-Film and Single-Crystal Organic Field-Effect Transistor Based on Dinaphtho[2,1-b:1′,2′-d]thiophene
K. Nakahara, C. Mitsui, T. Okamoto, M. Yamagishi, J. Soeda, K. Miwa, H. Sato, A. Yamano, T. Uemura, and J. Takeya
Jpn. J. Appl. Phys. 52, 05DC10 (2013).
We describe physicochemical properties, crystal structures, and field-effect transistor performances of dinaphtho[2,1-b:1′,2′-d]thiophene (DNT-U) with a unique twisted structure. The HOMO energy level of DNT-U was estimated to be -5.77 eV by measurement of electrochemical property in solution, indicating that this material is a promising candidate for air-stable p-type organic semiconductors. DNT-U possesses anisotropic one-dimensional transfer integrals originating from the columnar face-to-face π-stacking motif, which was determined by X-ray single crystal structural analysis. In order to evaluate intrinsic hole transporting ability of DNT-U, we fabricated the single-crystal field-effect transistors (FETs). The devices showed hole mobility of up to 0.15 cm2 V-1 s-1, which value is almost one order of magnitude higher than that of the vacuum deposited thin film FETs.