Ou-yangさんらのhigh-k絶縁膜上のC10-DNTTトランジスタに関する論文が Applied Physics Letters オンライン版に掲載されました。
- High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene
W. Ou-Yang, T. Uemura, K. Miyake, S. Onish, T. Kato, M. Katayama, M. Kang, K. Takimiya, M. Ikeda, H. Kuwabara, M. Hamada, and J. Takeya
Appl. Phys. Lett. 101, 223304 (2012).
High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2O3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.