中原君の論文がJpn. J. Appl. Phys.に掲載されました

中原君の論文が Japanese Journal of Applied Physics オンライン版に掲載されました。

  • Investigation of Hole Transporting Properties in Thin-Film and Single-Crystal Organic Field-Effect Transistor Based on Dinaphtho[2,1-b:1′,2′-d]thiophene
    K. Nakahara, C. Mitsui, T. Okamoto, M. Yamagishi, J. Soeda, K. Miwa, H. Sato, A. Yamano, T. Uemura, and J. Takeya
    Jpn. J. Appl. Phys. 52, 05DC10 (2013).
    DOI: 10.7567/JJAP.52.05DC10

    Abstract:
    We describe physicochemical properties, crystal structures, and field-effect transistor performances of dinaphtho[2,1-b:1′,2′-d]thiophene (DNT-U) with a unique twisted structure. The HOMO energy level of DNT-U was estimated to be -5.77 eV by measurement of electrochemical property in solution, indicating that this material is a promising candidate for air-stable p-type organic semiconductors. DNT-U possesses anisotropic one-dimensional transfer integrals originating from the columnar face-to-face π-stacking motif, which was determined by X-ray single crystal structural analysis. In order to evaluate intrinsic hole transporting ability of DNT-U, we fabricated the single-crystal field-effect transistors (FETs). The devices showed hole mobility of up to 0.15 cm2 V-1 s-1, which value is almost one order of magnitude higher than that of the vacuum deposited thin film FETs.